Bilayer graphene based surface passivation enhanced nano structured self-powered near-infrared photodetector

摘要

A simple methyl-terminated (-CH3) surface passivation approach has been employed to enhance the performance of the bilayer graphene/Si nanohole array (BLG/SiNH array) Schottky junction based self-powered near infrared photodetector (SPNIRPD). The as-fabricated SPNIRPD exhibits high sensitivity to light at near infrared region at zero bias voltage. The Ilight/Idark ratio measured is 1.43 × 107, which is more than an order of magnitude improvement compared with the sample without passivation (∼6.4 × 1051). Its corresponding responsivity and detectivity are 0.328 AW-1 and 6.03 × 1013 cmHz1/2W-1, respectively. The demonstrated results have confirmed the high-performance SPNIRPD compared with the photodetectors of similar type and its great potential application in future optoelectronic devices.